Samsung Starts Producing First 512GB eUFS Storage Chips for Mobile Devices

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They 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations.

Samsung has announced the beginning of mass production of what it claims is the world's first 512 GB embedded Universal Flash Storage (eUFS) solution for next-gen mobile devices. But what if the next Samsung flagship actually came with 512GB of built-in storage?

The 512GB memory chip is made of eight 64-layer 512Gb V-NAND chips that are joined by a controller chip. This effectively doubles the density of Samsung's previous 48-layer V-NAND 256GB eUFS solution, offering twice as much storage in the same amount of space.

This chip will give upcoming flagship Samsung phones unparalleled storage capacity.

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The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology will potentially help the Galaxy S9 to exhibit better battery life.

To maximize the performance and energy efficiency of the new 512GB eUFS, Samsung has introduced a new set of proprietary technologies. "In addition, the 512GB eUFS' controller chip speeds up the mapping process for converting logical block addresses to those of physical blocks", the company says in its statement.

Speed's sufficient for most application: Samsung's promised "sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively" and random data access speeds of 42,000 IOPS when reading and 40,000 IOPS when writing. The company states that the package enables transferring a 5GB-equivalent Full HD video clip to an SSD in about six seconds-making it over eight times faster than a typical microSD card. This will improve the speed of storage-intensive tasks such as high-resolution burst photos, file searches, and downloading videos in dual app mode, the company states.

Would you still be interested in picking up the Galaxy S9 if it shipped with 500GB of internal flash storage instead of a microSD slot? No, not really. That's why Samsung says it is going to steadily increase its production volume for both 512 GB and 256 GB V-NAND chips.

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